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22 May 2009 The role of exciton-exciton interaction on nonlinearities in GaN microdisks
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Large built-in piezoelectric fields in nitride nanostructures, because of their wurtzite structure, induce a spatial seperation between confined electrons and holes and lead to formation of electric dipoles. This paper investigates the effects of exciton-exciton interaction as a dipolar interaction in a GaN/AlxGa1-xN microdisk. We show how this interaction result in biexciton binding energies in the meV energy range. Also we study the effect of disk radius on exciton binding energy. Results show that the exciton binding energy in smaller disks, is larger than the bigger one.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Shojaei, F. Troiani, A. Asgari, M. Kalafi, and G. Goldoni "The role of exciton-exciton interaction on nonlinearities in GaN microdisks", Proc. SPIE 7354, Nonlinear Optics and Applications III, 73541I (22 May 2009);

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