Paper
18 May 2009 Measuring small thickness changes of a thin film by white-light spectral interferometry
P. Hlubina, J. Lunácek, D. Ciprian, M. Lunácková
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Abstract
A white-light spectral interferometric technique is used for measuring small thickness changes of a SiO2 thin film grown by thermal oxidation on a Si substrate. The technique is based on recording of the spectral interferograms in a Michelson interferometer with one of its mirrors replaced by a thin-film structure. From the spectral interferograms, the nonlinear-like phase function related to the phase change on reflection from the thin-film structure is retrieved. The phase function is fitted to the theoretical one to obtain the thin-film thickness precisely provided that the optical constants of the thin-film structure are known. This procedure is used for measuring small thickness changes of a SiO2 thin film attributed to different dopant concentrations of a Si substrate. The results of the technique are compared with those obtained by spectral reflectometry and very good agreement is confirmed.
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P. Hlubina, J. Lunácek, D. Ciprian, and M. Lunácková "Measuring small thickness changes of a thin film by white-light spectral interferometry", Proc. SPIE 7356, Optical Sensors 2009, 735618 (18 May 2009); https://doi.org/10.1117/12.820005
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KEYWORDS
Thin films

Silicon

Interferometry

Silica

Mirrors

Beam splitters

Reflection

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