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28 May 2009 Local charge storage and decay mechanism in silica
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Proceedings Volume 7364, Nanotechnology IV; 736405 (2009) https://doi.org/10.1117/12.821457
Event: SPIE Europe Microtechnologies for the New Millennium, 2009, Dresden, Germany
Abstract
Positive and negative charges are stored locally in thin films of silicon oxide on silicon by applying a voltage between an AFM cantilever tip and the silicon substrate. The stored charges are displayed by Kelvin probe force microscopy (KPFM). The process of charge storing is investigated with respect to different dwell times and different voltages. The amount of stored charges increases both with applied voltage and dwell time. A decay mechanism of the charges with two different time regimes is discussed. A fast decay is attributed to a migration parallel to the surface, while the second one is dominated by a transport perpendicular to the substrate surface.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harald Graaf, Carsten Maedler, and Christian von Borczyskowski "Local charge storage and decay mechanism in silica", Proc. SPIE 7364, Nanotechnology IV, 736405 (28 May 2009); https://doi.org/10.1117/12.821457
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