Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

M. Razeghi; C. Bayram

doi:10.1117/12.819390

20 May 2009 Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

M. Razeghi, C. Bayram

Author Affiliations +

Proceedings Volume 7366, Photonic Materials, Devices, and Applications III; 73661F (2009) https://doi.org/10.1117/12.819390
Event: SPIE Europe Microtechnologies for the New Millennium, 2009, Dresden, Germany

Abstract

Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.

Citation Download Citation

M. Razeghi and C. Bayram "Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73661F (20 May 2009); https://doi.org/10.1117/12.819390

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