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20 May 2009 Near-infrared resonant cavity enhanced silicon microsphere photodetector
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Proceedings Volume 7366, Photonic Materials, Devices, and Applications III; 73661M (2009) https://doi.org/10.1117/12.821198
Event: SPIE Europe Microtechnologies for the New Millennium, 2009, Dresden, Germany
Abstract
Elastic scattering intensity calculations at 90° and 0° for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 μm radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 104.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohammed Sharif Murib, Emre Yüce, Oğuzhan Gürlü, and Ali Serpengüzel "Near-infrared resonant cavity enhanced silicon microsphere photodetector", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73661M (20 May 2009); https://doi.org/10.1117/12.821198
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