Large-area terahertz emitters based on GaInAsN

F. Peter; S. Winnerl; H. Schneider; M. Helm; K. Köhler

doi:10.1117/12.821483

20 May 2009 Large-area terahertz emitters based on GaInAsN

F. Peter, S. Winnerl, H. Schneider, M. Helm, K. Köhler

Proceedings Volume 7366, Photonic Materials, Devices, and Applications III; 73661R (2009) https://doi.org/10.1117/12.821483
Event: SPIE Europe Microtechnologies for the New Millennium, 2009, Dresden, Germany

Abstract

We present large-area emitters based on GaInAsN which show efficient THz emission for excitation wavelengths up to 1.35 μm. The substrate material consists of a 1000 nm Ga_1-yIn_yAs_1-xN_x (y = 0.11 and x = 0.04) layer grown by molecularbeam epitaxy on semi-insulating GaAs. On top there is an additional GaAs/Al_0.3Ga_0.7As heterostructure with thicknesses of 5 nm for the GaAs and 60 nm for the AlGaAs layer, respectively. Transmission measurements with a Fourier transform spectrometer reveal a bandgap corresponding to a wavelength of 1.5 μm. The resistance of a complete device with an active area of 1 mm² is 0.3 MΩThis allows operation with high bias fields (30 kV/cm) without being limited by heating.

Citation Download Citation

F. Peter, S. Winnerl, H. Schneider, M. Helm, and K. Köhler "Large-area terahertz emitters based on GaInAsN", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73661R (20 May 2009); https://doi.org/10.1117/12.821483

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