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22 May 2009 Transport imaging with near-field scanning optical microscopy
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Proceedings Volume 7378, Scanning Microscopy 2009; 73782B (2009) https://doi.org/10.1117/12.824114
Event: SPIE Scanning Microscopy, 2009, Monterey, California, United States
Abstract
Direct imaging of charge transport is obtained in luminescent materials by combining the excitation capability and resolution of a scanning electron microscope (SEM) with high sensitivity optical imaging. A regular optical microscope (OM) or a near field scanning optical microscope (NSOM) is operated within the SEM to allow for characterization of semiconductor materials by imaging the spatial variation of luminescence associated with minority carrier recombination. The NSOM system uses a Nanonics MultiView 2000 that allows for independent scanning of both sample and collecting fiber. The technique builds upon traditional cathodoluminescence (CL), but differs in that spatial information from the luminescence is maintained, allowing for direct imaging of carrier transport. The approach will be introduced with results from double heterostructures of GaAs and the effect of radiation damage on minority carrier diffusion lengths. Then, its application to structures requiring near field imaging will be illustrated with results from measurements of carrier diffusion in GaN nanowires.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nancy M. Haegel, Chun-Hong Low, Lee Baird, and Goon-Hwee Ang "Transport imaging with near-field scanning optical microscopy", Proc. SPIE 7378, Scanning Microscopy 2009, 73782B (22 May 2009); https://doi.org/10.1117/12.824114
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