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11 May 2009 In-die mask registration metrology for 32nm node DPT lithography
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 737915 (2009) https://doi.org/10.1117/12.824282
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
Pattern placement on reticles is considered a key performance issue for Double Patterning Lithography (DPL) for the 32nm node and beyond. Pattern placement metrology on reticles may therefore become an important yield enabling factor for 32nm node semiconductor device manufacturing. Today in the case of logic designs, mask metrology is performed on dedicated registration test patterns in the kerf area between active dies, or on metrology cells inside the active array. However, with the introduction of DPL, the overlay requirements will become more stringent and therefore reticles need to be characterized in greater detail. In order to achieve the tighter overlay performance targets of less than 7nm [1] on the wafer for the 32nm node, registration metrology on the mask is expected to include "active" structures in the die. These structures may not have parallel edges and thus standard edge detection algorithms for registration metrology may not be applicable. We will explain the measurement principle and report on the first measurement results obtained on from the actual state-of-the-art registration metrology tool on test reticles simulating metrology in the dense active array. These data will be analyzed and compared with results achieved using standard registration pattern. Data evaluation software algorithms are already available to compare pattern placement performance between reticle layers.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus-Dieter Roeth, Frank Laske, Michael Heiden, Dieter Adam, Artur Boesser, Klaus Rinn, André Schepp, and Jochen Bender "In-die mask registration metrology for 32nm node DPT lithography", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737915 (11 May 2009); https://doi.org/10.1117/12.824282
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