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11 May 2009 Mask-LMC: lithographic simulation and defect detection from high-resolution mask images
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73791B (2009)
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
We report the development of Mask-LMC for defect printability evaluation from sub-200nm wavelength mask inspection images. Both transmitted and reflected images are utilized, and both die-to-die and die-to-database inspection modes are supported. The first step of the process is to recover the patterns on the mask from high resolution T and R images by de-convolving inspection optical effects. This step uses a mask reconstruction model, which is based on rigorous Hopkins-modeling of the inspection optics, and is pre-determined before the full mask inspection. After mask reconstruction, wafer scanner optics and wafer resist simulations are performed on the reconstructed mask, with a wafer lithography model. This step leverages Brion's industry-proven, hardware-accelerated LMC (Lithography Manufacturability Check) technology1. Existing litho process models that are in use for Brion's OPC+ and verification products may be used for this simulation. In the final step, special detectors are used to compare simulation results on the reference and defect dice. We have developed detectors for contact CD, contact area, line and space CD, and edge placement errors. The detection result has been validated with AIMSTM.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George Chen, James N. Wiley, Jen-Shiang Wang, Rafael C. Howell, Shufeng Bai, Yi-Fan Chen, Frank Chen, Yu Cao, Tadahiro Takigawa, Terunobu Kurosawa, Hideo Tsuchiya, Kinya Usuda, Masakazu Tokita, Fumio Ozaki, Nobutaka Kikuiri, and Yoshitake Tsuji "Mask-LMC: lithographic simulation and defect detection from high-resolution mask images", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791B (11 May 2009);

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