The art of photomask materials for low-k1-193nm lithography

Masahiro Hashimoto; Hiroyuki Iwashita; Hideaki Mitsui

doi:10.1117/12.830600

11 May 2009 The art of photomask materials for low-k1-193nm lithography

Masahiro Hashimoto, Hiroyuki Iwashita, Hideaki Mitsui

Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73791Q (2009) https://doi.org/10.1117/12.830600
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan

Abstract

The resolution of photomask patterns were improved with a hardmask (HM) system. The system which is thin Sicompounds layer is easily etched by the hyper-thin resist (below 100nm thickness). The HM material has sufficient etching selectivity against the chrome-compounds which is the second layer chrome absorber for the phase-shifter. This hardmask layer has been completely removed during the phase-shifter etching. It means that the conventional phase-shit mask (PSM) has been made with the ultimately high-resolution without configuration changes. Below 50nm resolution of PSM was made with 90nm thickness resist on HM layer in this paper. The CD bias between a resist feature CD and a chrome feature CD was almost zero (below 1nm) in the optimized etching condition. We confirmed that the mask performances were the equal to COMS (Cr-HM on MoSi binary mask) in resolution and CD linearity. The performances of hardmask blanks will be defined by resist performance because of almost zero bias.

Citation Download Citation

Masahiro Hashimoto, Hiroyuki Iwashita, and Hideaki Mitsui "The art of photomask materials for low-k1-193nm lithography", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791Q (11 May 2009); https://doi.org/10.1117/12.830600

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