Evaluation for EAPSM life time by ArF pellicle characteristic

Kang Joon Seo; Ji Sun Ryu; Goo Min Jeong; Shin Cheol Kang; Yong Dae Kim; Sang Chul Kim; Chang Yeol Kim

doi:10.1117/12.824304

11 May 2009 Evaluation for EAPSM life time by ArF pellicle characteristic

Kang Joon Seo, Ji Sun Ryu, Goo Min Jeong, Shin Cheol Kang, Yong Dae Kim, Sang Chul Kim, Chang Yeol Kim

Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73791S (2009) https://doi.org/10.1117/12.824304
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan

Abstract

As the nano-lithography technology continues to develop towards advanced generation of ArF immersion lithography, the quality of ArF EAPSM becomes the most valuable factor for worldwide Maskshop. Therefore outturn of ArF EAPMS increase continuously, and people who work in the fields of semiconductor engineering give consequence to good quality of ArF EAPSM until the EUV lithography generation. Because 300mm wafer litho-facility use higher exposure energy, wider shot field and more shots per a wafer for achieving more memory(DRAM or Flash) chips than 200mm exposure facility, photo engineer wants unchanged initial condition of mask quality(CD MTT, CD Uniformity, repeating defect, phase shift and transmittance). In other words, mask manufacturer must focus on the concept of ArF EAPSM 'life time'. We have investigated the influence grade inducing the lithographic variation between the growth of exposure energy based Haze phenomena, thin organic pellicle membrane characteristics, and we have verified that the ArF pellicle durability is one of the most important evidence for improvement of life time of ArF EAPSM. In this study, related with ArF EAPSM life time, we tried to evaluate the influence of ArF pellicle characteristic consisting of pellicle membrane transmittance strength (durability against ArF laser source) and non acid mask condition for the period of non Haze contamination without added re-pellicle → re-cleaning cycle. Metrological inspection and evaluation was conducted with several equipment and analysis including mask inspection, Scatterometer, IC, ArF laser accelerator.

Citation Download Citation

Kang Joon Seo, Ji Sun Ryu, Goo Min Jeong, Shin Cheol Kang, Yong Dae Kim, Sang Chul Kim, and Chang Yeol Kim "Evaluation for EAPSM life time by ArF pellicle characteristic", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791S (11 May 2009); https://doi.org/10.1117/12.824304

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Pellicles

Photomasks

Air contamination

Transmittance

Contamination

Semiconducting wafers

Inspection

Show All Keywords

Keywords/Phrases

Search In:

Publication Years