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11 May 2009 Study of electric-field-induced-development method
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73791X (2009) https://doi.org/10.1117/12.824310
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
Mask development process for 2x nm node devices needs stringent CD uniformity and CD linearity. To evaluate and improve these CD qualities, we proposed to introduce electric-field-induced-development method into proximity gap suction development system (PGSD). It is the way to develop with applying electric potential to the metallic development nozzle to stimulate the movement of hydroxide ions. In this paper, we will report the effect of electric-field-induced-development method on CD uniformity and CD linearity.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masatoshi Terayama, Hideaki Sakurai, Mari Sakai, Masamitsu Ito, Osamu Ikenaga, Hideo Funakoshi, Takahiro Shiozawa, Syoutarou Miyazaki, Yoshihiko Saito, and Naoya Hayashi "Study of electric-field-induced-development method", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791X (11 May 2009); https://doi.org/10.1117/12.824310
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