Paper
11 May 2009 A noble evaluation method for repaired area utilizing SEM images
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Abstract
In general photomask defect repair process flow, repaired portion is evaluated with AIMSTM and if AIMSTM's result is out of specification, the repaired portion must be re-repaired. With shrinking pattern on device, tighter specification is required. Therefore re-repair cycle time increases and turn around time of defect repair process becomes much longer. To solve this problem, we propose a noble evaluation method that enables us to judge without using AIMSTM with repair tool images. Images of EB repair tool is available for our propose because EB repair tool dose not give any damage on substrate and the resolution of image is quite high compared to other repair tools, FIB and Nanomachining tool. We made lithography simulation and practical experiments with line & space pattern of ArFatt. PSM with programmed defects. Consequently, we can predict AIMS-Results immediately after repair and there is a possibility to reduce the turn around time of defect repair process.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keiko Morishita, Shingo Kanamitsu, and Takashi Hirano "A noble evaluation method for repaired area utilizing SEM images", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792C (11 May 2009); https://doi.org/10.1117/12.824326
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CITATIONS
Cited by 2 patents.
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KEYWORDS
Scanning electron microscopy

Bridges

Critical dimension metrology

Photomasks

Semiconducting wafers

Lithography

Image processing

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