Paper
11 May 2009 Study of CD variation at EUV mask fabrication occurred by electric conduction from top to back side
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Abstract
Extreme Ultra Violet Lithography (EUVL) is the most leading next generation lithographic technology post ArF immersion lithography. The Structure of EUV mask differ from traditional photomask., especially backside coating. E-chuck is employed to fix the EUV mask on the scanner. Therefore a conductive film on backside of the EUV mask blank is needed. We investigated what have an influence on mask manufacturing process caused by the backside coating differed from a traditional photomask. From our experiment, at the mask fabrication process, especially RIE process to etch Ta absorber, the CD variation is occurred by electric conduction between the backside conductive coating and the absorber on the Mo/Si multi-layer. As a result, the EUV mask blank without electric conduction between the backside conductive coating and the absorber on the Mo/Si multilayer is necessary.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kosuke Takai, Koji Murano, Kazuki Hagihara, Masamitsu Itoh, Tsukasa Abe, Takashi Adachi, Hideo Akizuki, Tadahiko Takikawa, Hiroshi Mohri, and Naoya Hayashi "Study of CD variation at EUV mask fabrication occurred by electric conduction from top to back side", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792I (11 May 2009); https://doi.org/10.1117/12.824332
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KEYWORDS
Photomasks

Extreme ultraviolet

Etching

Coating

Extreme ultraviolet lithography

Conductive coatings

Mask making

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