Translator Disclaimer
11 May 2009 FIB mask repair technology for EUV mask
Author Affiliations +
Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73792L (2009)
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
We evaluated a FIB-CVD (Focused Ion Beam-Chemical Vapor Deposition) process for repairing clear defects on EUV masks. For the CVD film, we selected Carbon material. Our simulation result showed that the properties of wafer-prints depended on the density of the carbon films deposited for repairing the clear defects. Especially, when the density of carbon film was higher than that of graphite the properties of the wafer-prints came out to be almost same as obtained from Ta-based absorbers. For CVD, in this work we employed typical carbon based precursor that has been routinely used for repairing photomask patterns. The defects created for our evaluation were line-cut defects in a hp225nm L/S pattern. The performance of defect repair was evaluated by SFET (Small Field Exposure Tool) printability test. The study showed that the focus characteristic of repaired region deteriorated as the thickness of the deposition film decreased, especially when the thickness went below the thickness of the absorber. However, when the deposition film thickness was same as that of the absorber film, focus characteristic was found to be excellent. The study also revealed that wafer-print CDs could be controlled by controlling the CDs of the deposition films. The durability of deposition films against the buffer layer etching process and hydrogen radical cleaning process is also discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Kensuke Shiina, Fumio Aramaki, Anto Yasaka, Tsukasa Abe, and Hiroshi Mohri "FIB mask repair technology for EUV mask", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792L (11 May 2009);


Back to Top