Go proton: investigation on mask patterning for the 22nm hp node using a ML2 multibeam system

Joerg Butschke; Mathias Irmscher; Holger Sailer; Hans Loeschner; Elmar Platzgummer

doi:10.1117/12.824338

11 May 2009 Go proton: investigation on mask patterning for the 22nm hp node using a ML2 multibeam system

Joerg Butschke, Mathias Irmscher, Holger Sailer, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73792O (2009) https://doi.org/10.1117/12.824338
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan

Abstract

A mask patterning process based on proton multi-beam exposure in combination with Opaque-Molybdenum-Over-Glass (OMOG) hard mask blank material has been developed. As non-chemically amplified resist, HSQ has been selected. Using the IMS Nanofabrication proof of concept proton Multi Beam System which is designed for 43,000 programmable ion beams, an acceptable exposure dose of around 25μC/cm² has been determined for 10 keV protons. Assessment of the process flow has been done in terms of dose latitude, LER, LWR, CD variation, and resolution capability.

Citation Download Citation

Joerg Butschke, Mathias Irmscher, Holger Sailer, Hans Loeschner, and Elmar Platzgummer "Go proton: investigation on mask patterning for the 22nm hp node using a ML2 multibeam system", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792O (11 May 2009); https://doi.org/10.1117/12.824338

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