Influence of flip chip solder bump distribution on MEMS sensor reliability

Bin Wang; Song-sheng Wei; Jie-ying Tang

doi:10.1117/12.836945

24 August 2009 Influence of flip chip solder bump distribution on MEMS sensor reliability

Bin Wang, Song-sheng Wei, Jie-ying Tang

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73812Q (2009) https://doi.org/10.1117/12.836945
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Flip chip is one of the advanced packaging technologies, and it has been widely used in MEMS (micro-electromechanical system) packaging due to its manifold advantages compared with the traditional packaging methods. However, there are also many problems to be solved, especially, MEMS sensors are often inherently sensitive to stress induced by their packages because most MEMS sensors include movable structures. In this paper, the thermomechanical characteristic of a flip chip package with different parameters is studied by using the numerical simulation methods .The distribution pattern of flip chip solder bumps including four kinds of all arrays are considered specially, as it is a key design parameter in the technology and has distinct effect on the performance of MEMS sensors with movable structures. The result shows that the position of the structures on the chip should be considered seriously. For the microcantilever and microbridge with 400μm length and 2μm thickness fabricated by surface process, the stress and warpage can lead to a maximum relative change of 5% in the pull-in voltage of a microcantilever and 110% in the first resonant frequency of a microbridge after flip chip packaging, when the temperature changes from 25°C to 125°C.

Citation Download Citation

Bin Wang, Song-sheng Wei, and Jie-ying Tang "Influence of flip chip solder bump distribution on MEMS sensor reliability", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812Q (24 August 2009); https://doi.org/10.1117/12.836945

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