Electro-optical properties of silicon nanocrystals

Alexandre Lacombe; Félix Beaudoin; François Martin; Guy G. Ross

doi:10.1117/12.836999

4 August 2009 Electro-optical properties of silicon nanocrystals

Alexandre Lacombe, Félix Beaudoin, François Martin, Guy G. Ross

Proceedings Volume 7386, Photonics North 2009; 73860Y (2009) https://doi.org/10.1117/12.836999
Event: Photonics North 2009, 2009, Quebec, Canada

Abstract

In the last decade, the luminescent properties of silicon nanocrystals (Si-nc) have been increasingly studied, since Si-nc are considered as good candidates for optical interconnects between ever-smaller integrated circuits (ICs) components, and for the monolithic integration of all-silicon photonic and electronic devices. For these applications, an efficient coupling between optical and electrical signals within Si-nc structures is required. In this article, the interaction between simultaneous optical and electrical stimulation of Si-nc is examined. To this end, the photoluminescence (PL) spectra of Si-nc obtained by ion implantation in a thin (40 to 60 nm) oxide layer of metal-oxide-semiconductor (MOS) devices has been recorded as a function of variable applied voltage biases at room temperature. Two remarkable features have been observed: an optical memory effect, due to asymmetric PL intensity modulation with respect to biasing polarity, and an efficient optical switching of an electric current in reverse bias operation. These results are explained in terms of the competing effects of the storage and the photogeneration of charge carriers in Si-nc and oxide defects, as indicated by the correlation between the PL intensity and the current flowing through the MOS devices. Moreover, the use of positively- and negatively- doped substrates in the MOS structures distinctly shows the different effects of electron injection over hole injection in Si-nc and their surrounding SiO₂ matrix. These novel optoelectrical features of Si-nc are expected to add more functionality to future all-silicon photonic and electronic ICs.

Citation Download Citation

Alexandre Lacombe, Félix Beaudoin, François Martin, and Guy G. Ross "Electro-optical properties of silicon nanocrystals", Proc. SPIE 7386, Photonics North 2009, 73860Y (4 August 2009); https://doi.org/10.1117/12.836999

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KEYWORDS

Oxides

Molybdenum

Silicon

Pulsed laser operation

Continuous wave operation

Electrodes

Nanocrystals

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