Fabrication of III-V semiconductor quantum dots

Kouichi Akahane; Naokatsu Yamamoto

doi:10.1117/12.824233

2 September 2009 Fabrication of III-V semiconductor quantum dots

Kouichi Akahane, Naokatsu Yamamoto

Proceedings Volume 7395, Plasmonics: Nanoimaging, Nanofabrication, and their Applications V; 739507 (2009) https://doi.org/10.1117/12.824233
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

We propose a method for the fabrication of self-assembled semiconductor quantum dots (QDs) and the control of their density and emission wavelength. This method would be fundamental toward the fabrication of nanophotonic devices. We used molecular beam epitaxy and fabricated self-assembled QDs from various materials under various growth conditions. We controlled the emission wavelength over a wide range (700-1700 nm) by changing the materials around the QDs. We used antimonide-related materials or a highly stacked structure to control the density of the obtained QDs within the range of 10⁸-10¹³/cm².

Citation Download Citation

Kouichi Akahane and Naokatsu Yamamoto "Fabrication of III-V semiconductor quantum dots", Proc. SPIE 7395, Plasmonics: Nanoimaging, Nanofabrication, and their Applications V, 739507 (2 September 2009); https://doi.org/10.1117/12.824233

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