Paper
18 August 2009 Spin noise spectroscopy in semiconductors
Michael Oestreich, Michael Römer, Georg Müller, Dieter Schuh, Werner Wegscheider, Jens Hübner
Author Affiliations +
Abstract
We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Oestreich, Michael Römer, Georg Müller, Dieter Schuh, Werner Wegscheider, and Jens Hübner "Spin noise spectroscopy in semiconductors", Proc. SPIE 7398, Spintronics II, 739802 (18 August 2009); https://doi.org/10.1117/12.824177
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium arsenide

Spectroscopy

Doping

Semiconductors

Quantum wells

Magnetism

Spin dynamics

Back to Top