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20 August 2009 Pool-Frenkel emission and hopping conduction in semiconducting carbon nanotube transistor
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Abstract
The effect of using EBL with devices incorporating CNT has also been investigated. The effect on metallic and semiconducting CNT exposure in the channel of the transistor devices was examined and a physical mechanism for the variations discussed. We show that the subsequent generation of trap states along the CNT channel varies the conduction mechanism of the nanotube and has a significant effect on device performance. Metallic and semiconducting CNT react very differently, with an apparent increased localization effect in the metallic tubes responsible for dramatic decreases in conductance.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Perello, Woojong Yu, Dong Jae Bae, Seung Jin Chae, Moon J. Kim, Young Hee Lee, and Minhee Yun "Pool-Frenkel emission and hopping conduction in semiconducting carbon nanotube transistor", Proc. SPIE 7399, Carbon Nanotubes, Graphene, and Associated Devices II, 739907 (20 August 2009); https://doi.org/10.1117/12.828642
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