Growth of graphene films by plasma enhanced chemical vapour deposition

Laurent Baraton; Laurent Gangloff; Stéphane Xavier; Costel Sorin Cojocaru; Vincent Huc; Pierre Legagneux; Young Hee Lee; Didier Pribat

doi:10.1117/12.828747

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18 August 2009 Growth of graphene films by plasma enhanced chemical vapour deposition

Laurent Baraton, Laurent Gangloff, Stéphane Xavier, Costel Sorin Cojocaru, Vincent Huc, Pierre Legagneux, Young Hee Lee, Didier Pribat

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Proceedings Volume 7399, Carbon Nanotubes, Graphene, and Associated Devices II; 73990T (2009) https://doi.org/10.1117/12.828747
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

Since it was isolated in 2004, graphene, the first known 2D crystal, is the object of a growing interest, due to the range of its possible applications as well as its intrinsic properties. From large scale electronics and photovoltaics to spintronics and fundamental quantum phenomena, graphene films have attracted a large community of researchers. But bringing graphene to industrial applications will require a reliable, low cost and easily scalable synthesis process. In this paper we present a new growth process based on plasma enhanced chemical vapor deposition. Furthermore, we show that, when the substrate is an oxidized silicon wafer covered by a nickel thin film, graphene is formed not only on top of the nickel film, but also at the interface with the supporting SiO₂ layer. The films grown using this method were characterized using classical methods (Raman spectroscopy, AFM, SEM) and their conductivity is found to be close to those reported by others.

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Laurent Baraton, Laurent Gangloff, Stéphane Xavier, Costel Sorin Cojocaru, Vincent Huc, Pierre Legagneux, Young Hee Lee, and Didier Pribat "Growth of graphene films by plasma enhanced chemical vapour deposition", Proc. SPIE 7399, Carbon Nanotubes, Graphene, and Associated Devices II, 73990T (18 August 2009); https://doi.org/10.1117/12.828747

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