Low dimensional III-V compound semiconductor structures

Nobuhiko P. Kobayashi

doi:10.1117/12.829095

3 September 2009 Low dimensional III-V compound semiconductor structures

Nobuhiko P. Kobayashi

Proceedings Volume 7406, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials; 74060F (2009) https://doi.org/10.1117/12.829095
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

Material incompatibilities among dissimilar group III-V compound semiconductors (III-V CSs) often place limits on combining epitaxial thin films, however low-dimensional epitaxial structures (e.g., quantum dots and nanowires) demonstrate coherent growth even on incompatible surfaces. First, InAs QDs grown by molecular beam epitaxy on GaAs are described. Two-dimensional to three-dimensional morphological transition, lateral size evolution and vertical alignment of InAs QDs in a single and multiple stacks will be illustrated. Second, InP nanowires grown on non-single crystalline surfaces by metal organic chemical vapor deposition are described with the view toward applications where III-V CSs are functionally integrated onto various material platforms.

Citation Download Citation

Nobuhiko P. Kobayashi "Low dimensional III-V compound semiconductor structures", Proc. SPIE 7406, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials, 74060F (3 September 2009); https://doi.org/10.1117/12.829095

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