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20 August 2009 Optical and electric properties of aluminum-gallium doped zinc oxide for transparent conducting film
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Abstract
The well-known indium-tin-oxide is not suitable for solar cell, because of the chemical reduction, even without any hydrogen dilution. The inexpensive and non-toxic of transparent conducting Aluminum and Gallium doped ZnO (AZO and GZO) thin films have been investigated for the substitutes for the indium-tin-oxide thin films. AZO performs high transmittance at visible region, however, higher resistance than GZO. In this study, AZO and GZO composed film (GAZO) will be fabricated using DC magnetron co-sputtering deposition system to achieve lower resistance than AZO and higher transmittance than GZO. The optical and electric properties of different thickness of GAZO such as transmittance, reflection, carrier concentration, Hall mobility, and resistivity will be measured and analyzed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Meng-Chi Li, Chien-Cheng Kuo, Sheng-Hui Chen, and Cheng-Chung Lee "Optical and electric properties of aluminum-gallium doped zinc oxide for transparent conducting film", Proc. SPIE 7409, Thin Film Solar Technology, 74090W (20 August 2009); https://doi.org/10.1117/12.825206
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