Development of silicon nitride barrier layer for CIGS thin film solar cells

Shirish A. Pethe; Vinay Hadagali; Neelkanth G. Dhere

doi:10.1117/12.826137

20 August 2009 Development of silicon nitride barrier layer for CIGS thin film solar cells

Shirish A. Pethe, Vinay Hadagali, Neelkanth G. Dhere

Proceedings Volume 7409, Thin Film Solar Technology; 740911 (2009) https://doi.org/10.1117/12.826137
Event: SPIE Solar Energy + Technology, 2009, San Diego, California, United States

Abstract

Sodalime glass is the most commonly used substrate in fabrication of CIGS thin film solar cells. Small amount of sodium is known to have a favorable effect on device performance; however, an excess amount degrades device performance. The sodium out-diffusion from the sodalime glass is not well-controlled. To obtain the advantages of sodium without losing process control, an alkali barrier layer such as Si_xN_y is deposited before molybdenum layer followed by a sodium precursor. It is essential to optimize thickness of the barrier layer in terms of the ability to effectively avoid the diffusion of sodium from the sodalime glass into the absorber as well as in terms of the adhesion properties of the alkali barrier layer with the sodalime glass substrate. This paper presents effect of Si_xN_y barrier layer thickness on device performance and consequent optimization of thickness.

Citation Download Citation

Shirish A. Pethe, Vinay Hadagali, and Neelkanth G. Dhere "Development of silicon nitride barrier layer for CIGS thin film solar cells", Proc. SPIE 7409, Thin Film Solar Technology, 740911 (20 August 2009); https://doi.org/10.1117/12.826137

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