The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the
quality, functionality, and possible applications of such nanostructures it is important to accurately understand their
electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a
low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical
technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the
free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility.
Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the
ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.
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