Photonic band-engineering absorption enhancement of amorphous silicon for solar cells

Ounsi El Daif; Emmanuel Drouard; Guillaume Gomard; Yeonsang Park; Anne Kaminski; Alain Fave; Mustapha Lemiti; Xavier Letartre; Pierre Viktorovitch; Sungmo Ahn; Heonsu Jeon; Christian Seassal

doi:10.1117/12.825654

20 August 2009 Photonic band-engineering absorption enhancement of amorphous silicon for solar cells

Ounsi El Daif, Emmanuel Drouard, Guillaume Gomard, Yeonsang Park, Anne Kaminski, Alain Fave, Mustapha Lemiti, Xavier Letartre, Pierre Viktorovitch, Sungmo Ahn, Heonsu Jeon, Christian Seassal

Author Affiliations +

Proceedings Volume 7411, Nanoscale Photonic and Cell Technologies for Photovoltaics II; 74110O (2009) https://doi.org/10.1117/12.825654
Event: SPIE Solar Energy + Technology, 2009, San Diego, California, United States

Abstract

We report on enhancement of thin layer absorption through photonic band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show through simulation that an increase of the absorption by a factor of 1.5 is expected for a model film of 100nm of aSi. The proposal is then validated by an experimental demonstration, showing a 50% increase of the absorption of a demonstrator layer of 1μm thick aSi over a spectral range of 0.32 — 0.76μm. This shows new possibilities of increasing the efficiency of thin film photovoltaic cells. Photonic crystal based architecture are proposed and discussed.

Citation Download Citation

Ounsi El Daif, Emmanuel Drouard, Guillaume Gomard, Yeonsang Park, Anne Kaminski, Alain Fave, Mustapha Lemiti, Xavier Letartre, Pierre Viktorovitch, Sungmo Ahn, Heonsu Jeon, and Christian Seassal "Photonic band-engineering absorption enhancement of amorphous silicon for solar cells", Proc. SPIE 7411, Nanoscale Photonic and Cell Technologies for Photovoltaics II, 74110O (20 August 2009); https://doi.org/10.1117/12.825654

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