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4 September 2009 Real time measurement of the structural change in P3HT:PCBM thin films and the relation with device performance in OPV cells
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Abstract
The Al electrode on P3HT:PCBM blended thin films modified the nano structure of P3HT crystals during thermal annealing. The presence of an Al layer induced less preferred distribution of P3HT crystals after thermal annealing. In the surface region, the lateral growth of amorphous like (0.7 nm thick in [010] direction) face-on P3HT crystals was also affected by the inter diffusion of Al atoms into the active layer during thermal annealing in the presence of the Al layer. The inter diffusion of Al atoms produced an intermediate layer between the electrode and the active layer. By the real time measurement using synchrotron x-rays, we could confirm interfacial changes during annealing process. To understand the relation of structures and the device performance, we fabricated devices using pre and post annealing processes. The J-V characteristics show that more randomly distributed P3HT crystals are more advantageous to form the interpenetrating networks in the active layer. The short circuit current seems to be affected by nano structure of P3HT crystals in the bulk region, while the series resistance is more affected by the interfacial properties between the electrode and the active layer.
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Hyo Jung Kim, Hyun Hwi Lee, and Jang-Joo Kim "Real time measurement of the structural change in P3HT:PCBM thin films and the relation with device performance in OPV cells", Proc. SPIE 7416, Organic Photovoltaics X, 74160O (4 September 2009); https://doi.org/10.1117/12.825467
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