Performance and fabrication of organic field effect transistors with soluble oligomers

Yosuke Kitajima; Jiasheng Ru; Teruyoshi Mizutani; Kenzo Kojima; Shizuyasu Ochiai

doi:10.1117/12.826831

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20 August 2009 Performance and fabrication of organic field effect transistors with soluble oligomers

Yosuke Kitajima, Jiasheng Ru, Teruyoshi Mizutani, Kenzo Kojima, Shizuyasu Ochiai

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Proceedings Volume 7417, Organic Field-Effect Transistors VIII; 74170H (2009) https://doi.org/10.1117/12.826831
Event: SPIE Photonic Devices + Applications, 2009, San Diego, California, United States

Abstract

We fabricated an organic thin film prepared by oligomers of organic material according to the solution method and examined the quality of thin film using an X-Ray diffractometer. Based on the results, we fabricated flexible-organic field effect transistors using the spin-coating method. We adopted a polyethylenenaphthalate (PEN) film as the substrate, a cross-linked poly-4-vinylphenol (PVP) thin film as the gate dielectric insulation layer and a soluble quaterthiophene layer or pentacene layer as an active layer. The carrier mobility of the prepared quaterthiophene- organic-field effect transistor, the threshold voltage and the ON/OFF ratio are 2.27×10^-3 cm²/Vs, -37V and -37V respectively. In soluble Pentacene-OFET, the mobility is 0.09cm²/Vs, the ON/OFF is about 10² and the threshold voltage (Vth) is -7V.

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Yosuke Kitajima, Jiasheng Ru, Teruyoshi Mizutani, Kenzo Kojima, and Shizuyasu Ochiai "Performance and fabrication of organic field effect transistors with soluble oligomers", Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 74170H (20 August 2009); https://doi.org/10.1117/12.826831

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