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20 August 2009 Performance and fabrication of organic field effect transistors with soluble oligomers
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Abstract
We fabricated an organic thin film prepared by oligomers of organic material according to the solution method and examined the quality of thin film using an X-Ray diffractometer. Based on the results, we fabricated flexible-organic field effect transistors using the spin-coating method. We adopted a polyethylenenaphthalate (PEN) film as the substrate, a cross-linked poly-4-vinylphenol (PVP) thin film as the gate dielectric insulation layer and a soluble quaterthiophene layer or pentacene layer as an active layer. The carrier mobility of the prepared quaterthiophene- organic-field effect transistor, the threshold voltage and the ON/OFF ratio are 2.27×10-3 cm2/Vs, -37V and -37V respectively. In soluble Pentacene-OFET, the mobility is 0.09cm2/Vs, the ON/OFF is about 102 and the threshold voltage (Vth) is -7V.
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Yosuke Kitajima, Jiasheng Ru, Teruyoshi Mizutani, Kenzo Kojima, and Shizuyasu Ochiai "Performance and fabrication of organic field effect transistors with soluble oligomers", Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 74170H (20 August 2009); https://doi.org/10.1117/12.826831
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