Quadrant photodiode for electronic processing

Alicia Vera-Marquina; Alejandro Diaz Sanchez; J. Miguel Rocha-Pérez; D. Berman-Mendoza; Ivan Padilla

doi:10.1117/12.825520

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27 August 2009 Quadrant photodiode for electronic processing

Alicia Vera-Marquina, Alejandro Diaz Sanchez, J. Miguel Rocha-Pérez, D. Berman-Mendoza, Ivan Padilla

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Proceedings Volume 7419, Infrared Systems and Photoelectronic Technology IV; 74190Z (2009) https://doi.org/10.1117/12.825520
Event: SPIE Photonic Devices + Applications, 2009, San Diego, California, United States

Abstract

In this work, a photodiode for the visible spectral range, which will be integrated monolithically with CMOS circuits, is presented. Such Optoelectronic Integrated Circuit (OEIC) with high sensitivity in the 400-900 nm spectral range is utilized to realize electronic processing from the light beam position that hit a specific area of the photodetector. The output signals with voltages of 0V and 3 V can be implemented with a controller circuit. By the Using of He-Ne Laser at 633 nm as incident light, the responsivity of the Position Sense Photodetector (PSPD) was 0.35 A/W and the rise and fall time of less than 30 ns were achieved. These parameters were necessaries to achieve the photodiode integration in an industrial 0.5 μm CMOS process, only additional mask was needed in order to block out the threshold voltage implantation in the photo-active region. Therefore both designs of photodiode and the electronic processing circuit separately, are shown here, all design will be integrated monolithically in the same Silicon chip.

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Alicia Vera-Marquina, Alejandro Diaz Sanchez, J. Miguel Rocha-Pérez, D. Berman-Mendoza, and Ivan Padilla "Quadrant photodiode for electronic processing", Proc. SPIE 7419, Infrared Systems and Photoelectronic Technology IV, 74190Z (27 August 2009); https://doi.org/10.1117/12.825520

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