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11 September 2009 Front-end ASIC for pixilated wide bandgap detectors
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A CMOS application specific integrated circuit (ASIC) was developed for 3D Position Sensitive Detectors (PSD). The preamplifiers were optimized for pixellated Cadmium-Zinc-Telluride (CZT) Mercuric-Iodide (HgI2) and Thallium Bromide (TlBr) sensors. The ASIC responds to an ionizing event in the sensor by measuring both amplitude and timing in the pertinent anode and cathode channels. Each channel is sensitive to events and transients of positive or negative polarity and performs low-noise charge amplification, high-order shaping, peak and timing detection along with analog storage and multiplexing. Three methodologies are implemented to perform timing measurement in the cathode channel. Multiple sparse modes are available for the readout of channel data. The ASIC integrates 130 channels in an area of 12 x 9 mm2 and dissipates ~330 mW. With a CZT detector connected and biased, an electronic resolution of ~200 e- rms for charges up to 100 fC was measured. Spectral data from the University of Michigan revealed a cumulative single-pixel resolution of ~0.55 % FWHM at 662 KeV.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emerson Vernon, Gianluigi De Geronimo, Jack Fried, Cedric Herman, Feng Zhang, and Zhong He "Front-end ASIC for pixilated wide bandgap detectors", Proc. SPIE 7449, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI, 744905 (11 September 2009);

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