In this paper we report the thermal and electronic characteristics of the ternary compound
TlGaSe2, grown from the melt. The phase-diagram, congruency of material and phase transition
were studied by differential thermal analysis. The material melted congruently at 812.9C and did
not show any other phases between room temperature and the melting point. Results of crystal
growth, and effect of alloying and its effect on crystal growth and properties are also discussed.
In high purity material it is easier to cleave the crystal since layers of successive rows of
tetrahedrons are turned away from each other by 900. However, by suitable alloying, the angle
of the tetrahedrons can be changed and the tendency to cleave can be decreased. This effect will
be evaluated by comparing the microstructural properties of pure and alloyed crystals. By
measuring the optical transmission band edge we studied details absorption characteristics to
evaluate the effect of impurities on recombination characteristics. Results indicated that there
were no donor-acceptor recombinations at or above room temperature.
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