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9 September 2009 Grating-gate tunable plasmon absorption in InP and GaN based HEMTs
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Abstract
Gate-voltage tunable plasmon resonances in the two dimensional electron gas of high electron mobility transistors (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems are reported. Gates were in the form of a grating to couple normally incident THz radiation into 2D plasmons. Narrow-band resonant absorption of THz radiation was observed in transmission for both systems in the frequency range 10 - 100 cm-1. The fundamental and harmonic resonances shift toward lower frequencies with negative gate bias. Calculated spectra based on the theory developed for MOSFETs by Schaich, Zheng, and McDonald (1990) agree well with the GaN results, but significant differences for the InGaAs/InP device suggest that modification of the theory may be required for HEMTs in some circumstances.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. E. Peale, H. Saxena, W. R. Buchwald, G. Aizin, A. V. Muravjov, D. B. Veksler, N. Pala, X. Hu, R. Gaska, and M. S. Shur "Grating-gate tunable plasmon absorption in InP and GaN based HEMTs", Proc. SPIE 7467, Nanophotonics and Macrophotonics for Space Environments III, 74670Q (9 September 2009); https://doi.org/10.1117/12.826187
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