Paper
27 May 2009 Advanced proximity matching with pattern matcher
Alexander Serebryakov, Lionel Brige, Emmanuel Boisseau, Eric Peloquin, Vincent Coutellier, Jonathan Planchot
Author Affiliations +
Proceedings Volume 7470, 25th European Mask and Lithography Conference; 747013 (2009) https://doi.org/10.1117/12.835203
Event: 25th European Mask and Lithography Conference, 2009, Dresden, Germany
Abstract
In a semiconductor factory, each lithographic scanner is combined with a laser source and a track to form a lithocell. Quite frequently, lithographers have to deal with running the same lithographic process on multiple lithocells. Usually a new process is developed for one cell, and then transferred to other cells. However, small but non-negligible differences between lithocells, may result in yield losses. Nevertheless, several scanner's parameters (called proximity manipulators) can be used to compensate for these differences and match the secondary lithocells to the reference one. Recently a new advanced process matching methodology called Pattern Matcher has been developed. Using this method, we performed successful proximity matching of several ArF scanners in the production environment. In this paper, we discuss the principles of Pattern Matcher approach as well as methodology for data acquisition and present results of our matching.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Serebryakov, Lionel Brige, Emmanuel Boisseau, Eric Peloquin, Vincent Coutellier, and Jonathan Planchot "Advanced proximity matching with pattern matcher", Proc. SPIE 7470, 25th European Mask and Lithography Conference, 747013 (27 May 2009); https://doi.org/10.1117/12.835203
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KEYWORDS
Scanners

Lithography

Critical dimension metrology

Photomasks

Optical proximity correction

Semiconducting wafers

Data acquisition

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