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14 October 2009 Semiconductor design for tuned charge transport characteristics
Antonio Facchetti, Zhihua Chen, Yen Zheng, Jordan R. Quinn, Christopher R. Newman, He Yan, Tse Nga Ng, Sanjiv Sambandan, Rene Lujan, Ana Claudia Arias
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Proceedings Volume 7487, Optical Materials in Defence Systems Technology VI; 748702 (2009) https://doi.org/10.1117/12.833641
Event: SPIE Security + Defence, 2009, Berlin, Germany
Abstract
In this paper we report on the use of two solution-processable polymeric and molecular n-channel semiconductors for the fabrication of transistors and CMOS inverters by gravure printing and inkjet printing. Furthermore, the injket-printed TFT/invertor stability characteristics are analyzed and discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Antonio Facchetti, Zhihua Chen, Yen Zheng, Jordan R. Quinn, Christopher R. Newman, He Yan, Tse Nga Ng, Sanjiv Sambandan, Rene Lujan, and Ana Claudia Arias "Semiconductor design for tuned charge transport characteristics", Proc. SPIE 7487, Optical Materials in Defence Systems Technology VI, 748702 (14 October 2009); https://doi.org/10.1117/12.833641
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KEYWORDS
Semiconductors
Dielectrics
Printing
Polymers
Inkjet technology
Transistors
Bromine
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