Accurate models for EUV lithography

Eric Hendrickx; Gian F. Lorusso; Jiong Jiang; Luoqi Chen; Wei Liu; Eelco Van Setten; Steve Hansen

doi:10.1117/12.829987

23 September 2009 Accurate models for EUV lithography

Eric Hendrickx, Gian F. Lorusso, Jiong Jiang, Luoqi Chen, Wei Liu, Eelco Van Setten, Steve Hansen

Proceedings Volume 7488, Photomask Technology 2009; 74882G (2009) https://doi.org/10.1117/12.829987
Event: SPIE Photomask Technology, 2009, Monterey, California, United States

Abstract

Accurate modeling of EUV Lithography is a mandatory step in driving the technology towards its foreseen insertion point for 22-16nm node patterning. The models are needed to correct EUV designs for imaging effects, and to understand and improve the CD fingerprint of the exposure tools. With a full-field EUV ADT from ASML now available in the IMEC cleanroom, wafer data can be collected to calibrate accurate models and check if the existing modeling infrastructure can be extended to EUV lithography. As a first topic, we have measured the CD on wafer of a typical OPC dataset at different flare levels and modeled the evolution of wafer CD through flare, reticle CD, and pitch using Brion's Tachyon OPC engine. The modeling first requires the generation of a flare map using long-range kernels to model the EUV specific long-range flare. The accuracy of the flare map can be established independently from the CD measurements, by using the traditional disappearing pad test for flare determination (Kirk test). The flare map is then used as background intensity in the calibration of the traditional optical models with short-range kernels. For a structure set of 600 features and over a flare range of 4-6%, an rms fit value of 0.9nm was obtained. As a second aspect of the modeling, we have calibrated a full resist model to process window data. The full resist model is then used in a combination with experimental measurements of reticle CD, slit intensity uniformity, focal plane behavior, and EUV thick mask effects to model the evolution of wafer CD across the exposure field. The modeled evolution of CD across the exposure field was found to be a good match to the experimentally seen evolution of CD across the field, and confirms that the 4 factors mentioned above are main contributions to the CD uniformity across the field. As such the modeling work enables a better understanding of the errors contributing to CD variation across the field for EUV technology.

Citation Download Citation

Eric Hendrickx, Gian F. Lorusso, Jiong Jiang, Luoqi Chen, Wei Liu, Eelco Van Setten, and Steve Hansen "Accurate models for EUV lithography", Proc. SPIE 7488, Photomask Technology 2009, 74882G (23 September 2009); https://doi.org/10.1117/12.829987

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available