Study on the optical property of P-C doped a-Si:H thin films

Haihong Cai; Wei Li; Yadong Jiang; Yuguang Gong; Zhi Li

doi:10.1117/12.838183

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30 November 2009 Study on the optical property of P-C doped a-Si:H thin films

Haihong Cai, Wei Li, Yadong Jiang, Yuguang Gong, Zhi Li

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Proceedings Volume 7506, 2009 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments; 75062D (2009) https://doi.org/10.1117/12.838183
Event: International Conference on Optical Instrumentation and Technology, 2009, Shanghai, China

Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Carbon (C) were deposited by plasma enhanced chemical vapor deposition (PECVD). The influence of carbon on the optical property and the content of hydrogen and carbon in the P-doped a-Si:H films were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry and Fourier-transform infrared spectroscopy, respectively. The results show that the C-Si bonds in the P-C doped a-Si:H thin films can be observed clearly, and the content of hydrogen and carbon as well as the optical band gap increases with increasing CH₄ gas flow rate, but the refractive index decreases with increasing CH₄ gas flow rate in the CVD chamber.

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Haihong Cai, Wei Li, Yadong Jiang, Yuguang Gong, and Zhi Li "Study on the optical property of P-C doped a-Si:H thin films", Proc. SPIE 7506, 2009 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments, 75062D (30 November 2009); https://doi.org/10.1117/12.838183

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