White light emitting diode based on InGaN chip with core/shell quantum dots

Changyu Shen; Yan Hong; Jiandong Ma; Jiangzhou Ming

doi:10.1117/12.841247

26 October 2009 White light emitting diode based on InGaN chip with core/shell quantum dots

Changyu Shen, Yan Hong, Jiandong Ma, Jiangzhou Ming

Proceedings Volume 7516, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration; 75160W (2009) https://doi.org/10.1117/12.841247
Event: Photonics and Optoelectronics Meetings 2009, 2009, Wuhan, China

Abstract

Quantum dots have many applications in optoelectronic device such as LEDs for its many superior properties resulting from the three-dimensional confinement effect of its carrier. In this paper, single chip white light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chip with luminescent colloidal quantum dots (QDs). Two kinds of QDs of core/shell CdSe /ZnS and core/shell/shell CdSe /ZnS /CdS nanocrystals were synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. This two kinds of QDs exhibited high photoluminescence efficiency with a quantum yield more than 41%, and size-tunable emission wavelengths from 500 to 620 nm. The QDs LED mainly consists of flip luminescent InGaN chip, glass ceramic protective coating, glisten cup, QDs using as the photoluminescence material, pyroceram, gold line, electric layer, dielectric layer, silicon gel and bottom layer for welding. The WLEDs had the CIE coordinates of (0.319, 0.32). The InGaN chip white-light-emitting diodes with quantum dots as the emitting layer are potentially useful in illumination and display applications.

Citation Download Citation

Changyu Shen, Yan Hong, Jiandong Ma, and Jiangzhou Ming "White light emitting diode based on InGaN chip with core/shell quantum dots", Proc. SPIE 7516, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, 75160W (26 October 2009); https://doi.org/10.1117/12.841247

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