Paper
12 October 2009 ICP etching of high Al mole fraction AlGaN
Zhao Meng, Libo Yu, Xiao Li, Qibin Liu, Huiqiang Duan, Chenhui Yu, Changqing Chen
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Abstract
The etching process has great influence on the performance of solar blind detector based on AlxGa1-xN epitaxial layers on sapphire substrate with high Al mole fraction grown by metal organic chemical vapor deposition (MOCVD) method. Traditional etching methods, including wet or reactive ion etching (RIE) are hard to achieve good result due to the high chemical-stability of AlGaN films with high Al mole fraction. In this paper, we studied on the inductively coupled plasma reactive ion etching (ICP-RIE) of high Al mole fraction AlxGa1-xN films (x>0.4) for fabricating high performance solar blind detectors. SiN was used as mask, and Cl2 and BCl3 were used as etching gas. Etching systems was selected from Oxford Inc. DC bias was controlled automatically. A 2.5:1 of selectivity on AlGaN and SiN was obtained with suitable flux and component of etching gas, RF power and ICP power. Etching velocity was adjusted mainly by RF power. The role of Ar, Cl2, and BCl3 in the etching process was also discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhao Meng, Libo Yu, Xiao Li, Qibin Liu, Huiqiang Duan, Chenhui Yu, and Changqing Chen "ICP etching of high Al mole fraction AlGaN", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75180H (12 October 2009); https://doi.org/10.1117/12.841195
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Cited by 2 scholarly publications.
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KEYWORDS
Etching

Aluminum

Plasma

Reactive ion etching

Metalorganic chemical vapor deposition

Argon

Sapphire

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