High power LPP EUV source system development status

Benjamin Szu-Min Lin; David Brandt; Nigel Farrar

doi:10.1117/12.839488

10 December 2009 High power LPP EUV source system development status

Benjamin Szu-Min Lin, David Brandt, Nigel Farrar

Proceedings Volume 7520, Lithography Asia 2009; 752007 (2009) https://doi.org/10.1117/12.839488
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan

Abstract

Extreme ultraviolet (EUV) technology has been recognized as the major lithography technology for 22 nm HP and beyond to fulfill Moore's Law, which predicts that circuit dimensions shrink 70% every 2~3 years in order to achieve cost down and obtain greater functionality per unit area. EUV source power is one of the key factors in determining the cost-effectiveness of EUVL compared to other lithography technologies, like double patterning. Only when EUV power can achieve a certain level, the cost of EUV lithography under high volume manufacturing (HVM) can become much more competitive than that of double patterning techniques. In this paper, the performance of the first production Cymer high power laser produced plasma (LPP) EUV source integrated with a 5 sr multi-layer mirror (MLM) collector and fully integrated debris mitigation will be shown. The latest results on power generation, stable and efficient collection, and clean transmission of EUV light through the intermediate focus will be presented. The lifetime of the MLM collector is a critical parameter in the development of extreme ultraviolet LPP lithography sources. Debris mitigation techniques are used to inhibit reflectivity degradation from deposition of target material, sputtering of the multilayer coating, and implantation of incident particles, which can reduce the efficiency of the MLM collector during exposure. The far field images of MLM collector are recorded by intermediate focus metrology with a CCD camera to determine the reflectivity status of the MLM collector during exposure. The results of these debris mitigation techniques are compared through multiple-hour EUV exposure. Testing shows cleanliness at the source-scanner interface acceptable to the limit of detection.

Citation Download Citation

Benjamin Szu-Min Lin, David Brandt, and Nigel Farrar "High power LPP EUV source system development status", Proc. SPIE 7520, Lithography Asia 2009, 752007 (10 December 2009); https://doi.org/10.1117/12.839488

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