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11 December 2009 Comparison of simulation and wafer results for shadowing and flare effect on EUV alpha demo tool
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Proceedings Volume 7520, Lithography Asia 2009; 75200T (2009)
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
In this study, in order to accurately predict the shadowing and flare effect of EUVL, we compared and analyzed the wafer and simulation result of the shadowing and flare effect of the EUV alpha demo tool at IMEC. Flare distribution of the EUV Alpha Demo tool was measured and was used in simulation tool to simulate several test case wafer result. Also, shadowing effect of the in-house created mask was measured and compared with simulation result to match the predictability of the simulation tool. Shadowing test comparison of wafer to simulation showed that simulation with resist model showing better overall fitness to actual wafer result. Both aerial and resist model simulation result was within 2.33nm to wafer result. Measured wafer CD to simulation CD comparison for flare showed that average error RMS of 3 test cases was 0.52, 2.05 and 3.47 nm for each test case respectively. In order to have higher accuracy for flare simulation, larger diameter size for flare profile is necessary. Also from shadow test, resist model better fit the wafer trend than using only the aerial image for simulating shadowing effect. EUV tool showed very promising result for sub 30nm DRAM critical layer printing ability and with proper flare and shadowing correction, reasonable result is expected for sub 30 and beyond critical layers of DRAM using EUV lithography. Further work will be done to compensate flare and shadowing effect of EUV.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Moon, Cheol-Kyun Kim, Byoung-Sub Nam, Byong-Ho Nam, Chang-Moon Lim, Donggyu Yim, and Sung-Ki Park "Comparison of simulation and wafer results for shadowing and flare effect on EUV alpha demo tool", Proc. SPIE 7520, Lithography Asia 2009, 75200T (11 December 2009);


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