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11 December 2009 Development of silicon glass for etch reverse layer (SiGERL) materials and BARCs for double patterning process
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Proceedings Volume 7520, Lithography Asia 2009; 75201F (2009)
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Materials and processes for double patterning using 193nm immersion lithography has been developed for the 32/22 nm node device generations. As for double patterning , some patterning methods have already been reported. For instance, there are LELE (Litho Etch Litho Etch) process and LFLE (Litho Freeze Litho Etch) process. LELE process is complicate and low throughput compared to LFLE process. On the other hand, freezing process and freezing material are needed in LFLE process. Then, we examined the process and the material that was able to form a minute pattern without increasing the number of processes as much as possible. The following is examined as a fine hole patterning process. At first, the pillar pattern is obtained by the X-Y double line dipole exposure. Secondly, the reverse material is applied on the pillar pattern and the subsequent process (dry etching or wet etching process) converts the pillar pattern into a hole pattern. We examined the reverse process and materials, including Silicon Glass for Etch Reverse Layer (SiGERL),and organic Bottom-Anti-Reflective coating (BARC) which is adequate for reflectivity control, lithography and the etching process.
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Yasushi Sakaida, Hiroaki Yaguchi, Rikimaru Sakamoto, and Bang-Ching Ho "Development of silicon glass for etch reverse layer (SiGERL) materials and BARCs for double patterning process", Proc. SPIE 7520, Lithography Asia 2009, 75201F (11 December 2009);

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