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12 December 2009 Implementation of new recticle inspection technology for progressive mask defect detection strategy on memory fab
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Proceedings Volume 7520, Lithography Asia 2009; 752026 (2009) https://doi.org/10.1117/12.837028
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
This paper discusses the most efficient mask re-qualification inspection mode for production memory reticles in an advanced memory fab. Progressive and haze defects continue to be the primary cause of mask degradation and mask re-clean mainly due to intensified density of photon energy involved with ArF exposure. Direct reticle inspection has been widely implemented in wafer fabs to provide early warning of haze defects before they reach critical levels. However, reticle inspection systems are increasingly challenged by aggressive optical proximity correction (OPC), subresolution assist feature (SRAF) and high requirement to detect printable defects. As we know Die-to-Die (D2D) mode has good sensitivity on main pattern but can't cover scribe line area. In this paper, we studied the integration inspection mode which combines Die-to-Die (D2D) on main pattern area and Stralight2+ on scribes and frames area. The detection capability of StarLight2+ and D2D on DRAM masks was evaluated and results shows that aggressive patterns (OPC, SRAF) are resolved well and provide early warning for crystal growth type defect on mask. The objective of this paper is to demonstrate both StarLight2+ and D2D capability to support memory wafer mask qualification requirements.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andy Lan, Jenny Hsu, Todd T. Shih, Toroy Tien, Jackie Cheng, Mike Yeh, Ellison Chen, and David Wu "Implementation of new recticle inspection technology for progressive mask defect detection strategy on memory fab", Proc. SPIE 7520, Lithography Asia 2009, 752026 (12 December 2009); https://doi.org/10.1117/12.837028
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