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26 February 2010 Impact of plasma exposure on organic low-k materials
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752107 (2010) https://doi.org/10.1117/12.854882
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
The impact of different etch plasmas on advanced porous organic low-k material is studied. Several analytical techniques such as Ellipsometric porosimetry (porosity and pore size), Water Contact Angle (hydrophilicity) and FTIR spectroscopy (chemical composition) are used for evaluation. The wafers were exposed in three different chambers (ICP, CCP and μWave) with various gas mixtures. The highest etch rate is obtained in O2/Cl2 and H2/N2 plasma in an inductively coupled plasma (ICP chamber) and the capacitevly coupled plasma (CCP chamber) respectively. Exposure of the low-k films in CCP plasma chamber with C4F8 / CH2F2 / Ar/N2 gas mixture can be used for the further damage prevention, because completely seals the pores. The surface of the sealed films remains hydrophobic (WCA=88°). The He/H2, C4F8/CH2F2/O2/Ar/N2, CF4/CH2F2 gas mixtures in CCP chamber provide partial pore sealing. The measured refractive indices showed no significant change between the damaged and pristine samples, however the plasma exposure in O2/Cl2 shows a tendency of C=O groups formation which may act as further centers of moisture adsorption.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Smirnov, A. K. Ferchichi, C. Huffman, and M. R. Baklanov "Impact of plasma exposure on organic low-k materials", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752107 (26 February 2010); https://doi.org/10.1117/12.854882
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