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25 January 2010 A three-phase time-correlation image sensor using pinned photodiode active pixels
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Proceedings Volume 7536, Sensors, Cameras, and Systems for Industrial/Scientific Applications XI; 75360S (2010) https://doi.org/10.1117/12.846532
Event: IS&T/SPIE Electronic Imaging, 2010, San Jose, California, United States
Abstract
A time correlation (TC) image sensor is a device that produces 3-phase time-correlated signals between the incident light intensity and three reference signals. A conventional implementation of the TC image sensor using a standard CMOS technology works at low frequency and with low sensitivity. In order to achieve higher modulation frequency and high sensitivity, the TC image sensor with a dual potential structure using a pinned diode is proposed. The dual potential structure is created by changing the impurity doping concentration in the two different potential regions. In this structure, high-frequency modulation can be achieved, while maintaining a sufficient light receiving area. A prototype TC image sensor with 366×390pixels is implemented with 0.18-μm 1P4M CMOS image sensor technology. Each pixel with the size of 12μm×12μm has one pinned photodiode with the dual potential structure, 12 transistors and 3capacitors to implement three-parallel-output active pixel circuits. A fundamental operation of the implemented TC sensor is demonstrated.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sangman Han, Tomohiro Iwahori, Tomonari Sawada, Shoji Kawahito, and Shigeru Ando "A three-phase time-correlation image sensor using pinned photodiode active pixels", Proc. SPIE 7536, Sensors, Cameras, and Systems for Industrial/Scientific Applications XI, 75360S (25 January 2010); https://doi.org/10.1117/12.846532
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