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28 December 2010 High-temperature microelectromechanical pressure sensors based on a SOI heterostructure for an electronic automatic aircraft engine control system
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Proceedings Volume 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation; 75442P (2010) https://doi.org/10.1117/12.885688
Event: Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 2010, Hangzhou, China
Abstract
There is a need of measuring distributed pressure on the aircraft engine inlet with high precision within a wide operating temperature range in the severe environment to improve the efficiency of aircraft engine control. The basic solutions and principles of designing high-temperature (to 523K) microelectromechanical pressure sensors based on a membrane-type SOI heterostructure with a monolithic integral tensoframe (MEMS-SOIMT) are proposed in accordance with the developed concept, which excludes the use of electric p-n junctions in semiconductor microelectromechanical sensors. The MEMS-SOIMT technology relies on the group processes of microelectronics and micromechanics for high-precision microprofiling of a three-dimension micromechanical structure, which exclude high-temperature silicon doping processes.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonid V. Sokolov "High-temperature microelectromechanical pressure sensors based on a SOI heterostructure for an electronic automatic aircraft engine control system", Proc. SPIE 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 75442P (28 December 2010); https://doi.org/10.1117/12.885688
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