Far-UV solid state lasers for semiconductor processing

James Jacob; Darrell Armstrong; Arlee Smith

doi:10.1117/12.843849

18 February 2010 Far-UV solid state lasers for semiconductor processing

James Jacob, Darrell Armstrong, Arlee Smith

Proceedings Volume 7582, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX; 75820U (2010) https://doi.org/10.1117/12.843849
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

The wavelength region between 190 and 200 nm is especially relevant to semiconductor manufacturing. In contrast to ArF excimer lasers, frequency up-converted solid-state lasers offer tuning, coherence and beam quality characteristics that are essential to high performance semiconductor processing. This paper reviews various methodologies for implementing pulsed non-linear optical interactions in this wavelength region given a wide range of laser operating formats and describes the utilization of these sources for the specific semiconductor applications of interference lithography and photoresist materials studies.

Citation Download Citation

James Jacob, Darrell Armstrong, and Arlee Smith "Far-UV solid state lasers for semiconductor processing", Proc. SPIE 7582, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX, 75820U (18 February 2010); https://doi.org/10.1117/12.843849

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