Highly reliable 637-639 nm red high-power LDs for displays

Takehiro Nishida; Naoyuki Shimada; Kenichi Ono; Tetsuya Yagi; Akihiro Shima

doi:10.1117/12.842812

17 February 2010 Highly reliable 637-639 nm red high-power LDs for displays

Takehiro Nishida, Naoyuki Shimada, Kenichi Ono, Tetsuya Yagi, Akihiro Shima

Proceedings Volume 7583, High-Power Diode Laser Technology and Applications VIII; 758303 (2010) https://doi.org/10.1117/12.842812
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

Higher power laser diodes (LDs) with a wavelength of 637-639nm are strongly demanded as a light source of display applications because luminosity factor of laser light is relatively high. In order to realize reliable high power operation, we have optimized LD structure, focusing on improvement of power saturation and sudden degradation. As a result, 40μm-wide broad-area (BA) LDs with window-mirror structure have been designed. We fabricated two kinds of single emitter LDs of 1.0mm cavity and 1.5mm cavity. The single LD is installed in conventional φ5.6 mm TO-CAN package. The 1.0mm LD showed very high wall plug efficiency (WPE) of 33% at 25 ºC (23% at 45 ºC) in the power range of around 300mW (30 lm). High output power of 600mW (60 lm) is realized by the 1.5mm LD. Both LDs have operated for over 1,000 hours without any degradation. Estimated mean time to failure (MTTF) is 10,000 hours. In addition, we fabricated an array LD consisting of 20 emitters (BA-LD structure), which shows reliable CW operation of 8W (at junction temperature of 50 ºC) for 10,000 hours.

Citation Download Citation

Takehiro Nishida, Naoyuki Shimada, Kenichi Ono, Tetsuya Yagi, and Akihiro Shima "Highly reliable 637-639 nm red high-power LDs for displays", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 758303 (17 February 2010); https://doi.org/10.1117/12.842812

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