Translator Disclaimer
Paper
17 February 2010 Recent development of high-power-efficiency 50-W CW TE/TM polarized 808-nm diode laser bar at Lasertel
Author Affiliations +
Abstract
This paper gives an overview of recent development of high-efficiency 50-W CW TE/TM polarized 808-nm diode laser bar at Lasertel. Focused development of device design and MBE growth processes has yielded significant improvement in power conversion efficiency (PCE) of 50-W CW TE/TM polarized 808-nm laser bars. We have achieved CW PCEs of 67 % to 64 % at heat-sink temperature of 5 °C and 25 °C, respectively. Ongoing life-testing indicates that the reliable powers of devices based on the new developments exceed those of established, highly reliable, production designs.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chuanshun Cao, Li Fan, Irene Ai, Jiang Li, Brian Caliva, Linfei Zeng, Prabhu Thiagarajan, and Mark McElhinney "Recent development of high-power-efficiency 50-W CW TE/TM polarized 808-nm diode laser bar at Lasertel", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830L (17 February 2010); https://doi.org/10.1117/12.841057
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top