Laser microstructuring of sapphire wafer and fiber

Yutang Dai; Gang Xu; Jianlei Cui; Fan Bai

doi:10.1117/12.841098

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16 February 2010 Laser microstructuring of sapphire wafer and fiber

Yutang Dai, Gang Xu, Jianlei Cui, Fan Bai

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Proceedings Volume 7590, Micromachining and Microfabrication Process Technology XV; 75900O (2010) https://doi.org/10.1117/12.841098
Event: SPIE MOEMS-MEMS, 2010, San Francisco, California, United States

Abstract

Currently, sapphire is widely used in the field of optoelectronic devices and micro-mechanical components. One of the problems in using sapphire is the difficulty in cutting and micro-structuring due to the hardness of sapphire itself. In this paper, laser micromachining characteristics of sapphire are investigated using 157nm DUV laser micro-ablation system. Under laser fluence of 3-4 J/cm², the maximum ablation rate could reach to 400nm/s. For 3D laser ablation, it is necessary to select a proper combination of process parameters. Several 3D micro-structures are produced in sapphire wafers and sapphire fibers. As a whole, the ablation equality is good for use.

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Yutang Dai, Gang Xu, Jianlei Cui, and Fan Bai "Laser microstructuring of sapphire wafer and fiber", Proc. SPIE 7590, Micromachining and Microfabrication Process Technology XV, 75900O (16 February 2010); https://doi.org/10.1117/12.841098

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